Wafer fabrication is advancing at a rapid pace in today's semiconductor industry, requiring several hundred processing steps before completion.

在當今的半導體行業中，晶圓製造技術發展迅速，需要經過幾百道加工工序才能完成。

Many of these steps are thermal processes.

其中許多步驟都是熱過程。

As device geometries continue to shrink, the thermal exposure must be reduced.

隨著設備幾何尺寸的不斷縮小，必須減少熱暴露。

Rapid thermal processing, or RTP, was developed to minimize a wafer's exposure to excess thermal energy.

快速熱加工（RTP）的開發是為了最大限度地減少晶片暴露在過量熱能下的時間。

This is achieved by using thermal ramp rates up to 1,000 times faster than a standard batch furnace.

這是通過使用比標準間歇式熔爐快 1000 倍的熱斜率來實現的。

The challenge for RTP is how to ramp quickly while maintaining temperature uniformity.

RTP 所面臨的挑戰是如何在保持溫度均勻性的同時快速升溫。

Present-day RTP systems use a single, non-contact optical pyrometer to measure a wafer's temperature at the center.

目前的 RTP 系統使用單個非接觸式光學高溫計來測量晶片中心的溫度。

This single-point measurement, however, can't sense center-to-edge temperature differences.

然而，這種單點測量無法感知中心到邊緣的溫度差。

The result is non-uniform heating, which causes slip defects and undesirable process variations.

其結果是加熱不均勻，造成滑移缺陷和不理想的工藝變化。

A second problem with conventional optical pyrometers is that they fail to adjust for the variation in the backside emissivity of the wafer.

傳統光學高溫計的第二個問題是，它們無法調整晶片背面發射率的變化。

Maintaining temperature control from wafer to wafer requires backside etching of the films, or a measurement of the emissivity and an adjustment to the production process.

要保持不同晶片之間的溫度控制，需要對薄膜進行背面蝕刻，或測量發射率並調整生產工藝。

Applied Materials has introduced a new rapid thermal technology, the RTP Centura with the patented honeycomb source, offering significant improvements in three main areas.

應用材料公司推出了一種新型快速熱技術 RTP Centura，該技術採用了專利蜂窩源，在三個主要方面實現了重大改進。

The first is in wafer heating control, using our patented honeycomb source.

首先是晶圓加熱控制，使用我們的專利蜂窩源。

This RTP Centura lamp module replicates the structural strength and space efficiency found in a beehive honeycomb.

RTP Centura 燈具模塊複製了蜂巢的結構強度和空間效率。

The light source contains 187 variable intensity tungsten halogen lamps, each housed inside a collimating light pipe.

光源包含 187 個強度可變的滷鎢燈，每個燈都安裝在準直光管內。

This provides the high spatial resolution of the light intensity pattern required for thermal uniformity in combination with the high optical power density required for fast thermal ramps.

這就提供了熱均勻性所需的高空間分辨率光強模式，以及快速熱斜坡所需的高光功率密度。

The second area of improvement with the RTP Centura is that temperature is measured by contact optical probes positioned beneath the wafer.

RTP Centura 的第二個改進之處在於，溫度是通過安裝在晶片下方的接觸式光學探頭測量的。

A multi-input software controller readjusts the individual lamp zones at a rate of 20 times per second to maintain thermal uniformity.

多輸入軟件控制器以每秒 20 次的速度重新調整各個燈區，以保持熱均勻性。

This plot of lamp voltage versus lamp group shows that the center to edge power distribution required to achieve uniform wafer temperature varies dramatically for different parts of the thermal cycle.

這幅燈管電壓與燈管組的對比圖顯示，在熱循環的不同階段，實現晶圓溫度均勻所需的從中心到邊緣的功率分佈變化很大。

The RTP chamber has a programmable variable temperature ramping capability of up to 75 degrees C per second, with a ramp uniformity of better than plus or minus 2 degrees C.

RTP 室具有可編程變溫升溫能力，每秒升溫可達 75 攝氏度，升溫均勻性優於正負 2 攝氏度。

Steady state temperature uniformity is typically better than plus or minus 0.5 degrees C.

穩態溫度均勻性通常優於正負 0.5 攝氏度。

The result is the most uniform thermal wafer processing possible in the industry today, and a process that's guaranteed to be free of lattice slip defects.

其結果是實現了當今業內最均勻的熱晶片加工，並保證了加工過程中無晶格滑移缺陷。

The third area of improvement is in the RTP Centura's ability to adjust for the changes in emissivity of the backside of the wafer.

第三個改進領域是 RTP Centura 能夠根據晶片背面發射率的變化進行調整。

We've solved this problem by designing the RTP Centura chamber to measure temperature independent of wafer emissivity, thereby greatly improving wafer-to-wafer repeatability.

我們通過設計 RTP Centura 箱來解決這個問題，它的溫度測量不受晶圓發射率的影響，從而大大提高了晶圓間的可重複性。

This simplifies the production process, eliminating the need for backside etches and emissivity checks.

這簡化了生產流程，無需進行背面蝕刻和發射率檢查。

The applied materials RTP process module is designed for integration on the Centura mainframe.

應用材料 RTP 流程模塊是為集成 Centura 主機而設計的。

The RTP Centura system utilizes dual, independent vacuum load locks that can each hold up to 25 wafers.

RTP Centura 系統採用雙獨立真空裝載鎖，每個鎖最多可容納 25 個晶片。

Located in a sealed high-purity transfer chamber, a magnetically coupled dual-speed robot provides precise movement of wafers, maximizing throughput and minimizing contamination.

在一個密封的高純度傳輸室中，磁耦合雙速機器人可精確移動晶片，最大限度地提高產量，減少汙染。

The high-purity environment eliminates the need for lengthy chamber purges.

在高純度環境中，無需進行長時間的腔室淨化。

Wafers enter the process chamber and are then lifted by three quartz pins.

晶圓進入製程室後，由三個石英銷釘提升。

The robot blade is withdrawn and the pins lower the wafer onto the edge ring.

機器人刀片收回，銷釘將晶片降到邊緣環上。

Rotation of the ring and wafer during processing results in excellent process uniformity.

在加工過程中旋轉圓環和晶片，可實現出色的加工均勻性。

The robot end effector is made of high-purity quartz, allowing removal of the wafer at temperatures as high as 800 degrees C.

機器人末端效應器由高純度石英制成，可在高達 800 攝氏度的高溫下取出晶片。

The wafer is then moved to a cool-down station prior to placement in the cassette.

然後，晶圓被移至冷卻站，再放入晶圓盒。

The three major applications for the RTP Centura system are ion implant anneal, silicide anneal, and oxidation.

RTP Centura 系統的三大應用是離子注入退火、硅化退火和氧化。

Results on source drain implant anneal show more precise control of L-effective dimensions, a requirement for submicron devices.

源漏極植入退火的結果表明，對 L 效尺寸的控制更為精確，而這正是亞微米器件的要求。

Multipoint temperature measurement ensures wafer-to-wafer repeatability of less than 1 degree C.

多點溫度測量確保晶圓與晶圓之間的重複性小於 1 攝氏度。

Annealing of titanium silicide films improves with the RTP Centura in process uniformity and repeatability.

使用 RTP Centura，硅化鈦薄膜的退火工藝在均勻性和可重複性方面都得到了改善。

Added non-uniformity is controlled to less than 1% independent of wafer backside films.

添加的不均勻度控制在 1%以下，與晶片背面薄膜無關。

Creation of thin film oxides for use as the gate oxide was not previously achievable with RTP technology.

以前的 RTP 技術無法制造出用作柵極氧化物的薄膜氧化物。

However, with the applied materials RTP chamber, oxide uniformities of better than 1% are achievable.

不過，在應用材料 RTP 室中，氧化物的均勻性可以達到優於 1%。

High throughput, excellent uptime, and very low maintenance make the RTP Centura a high-productivity, low-cost-of-ownership tool.

高吞吐量、出色的正常運行時間和極低的維護成本使 RTP Centura 成為一種高生產率、低擁有成本的工具。

Marathon customer tests have shown the system capable of running over 130,000 wafers without preventive maintenance.

馬拉松客戶測試表明，該系統能夠在不進行預防性維護的情況下運行超過 130,000 個晶片。

There is only one RTP system that provides backside emissivity-independent temperature measurement, multiple sensor control loops for complete wafer temperature control on a high-throughput, reliable wafer handling platform with benefits that include superior process performance and yield, and reduced cost of ownership.

目前只有一種 RTP 系統可在高產量、可靠的晶片處理平臺上提供與背面發射率無關的溫度測量和多個傳感器控制迴路，以實現完整的晶片溫度控制，其優勢包括卓越的製程性能和產量，以及降低擁有成本。

The RTP Centura with the honeycomb source, only from applied materials.

RTP Centura 帶有蜂巢源，僅採用應用材料。

Advancing RTP technology into the next century.

推動 RTP 技術進入下一個世紀。