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    isotropic

    US

    ・

    UK

    C2 高級
    adj.形容詞等方性的
    It is difficult to find isotropic crystals in nature

    影片字幕

    史丹佛奈米製造實驗室:乾蝕刻介紹 (共 4 部,第 1 部) (Stanford Nanofabrication Facility: Dry Etching - Introduction (Part 1 of 4))

    13:11史丹佛奈米製造實驗室:乾蝕刻介紹 (共 4 部,第 1 部) (Stanford Nanofabrication Facility: Dry Etching - Introduction (Part 1 of 4))
    • The second case is isotropic etching, and this is where we get the pure chemical etching, where you have undercut equal to the X-depth.

      第二種情況是各向同性蝕刻,也就是我們所說的純化學蝕刻,在這種情況下,下切深度等於 X 深度。

    • The second case is isotropic etching and this is where we get where it's a pure chemical etching where you have undercut equal to the etch depth.

      好吧,我們來給 X 選擇性下個定義。

    B2 中高級

    史丹佛奈米製程中心:乾蝕刻-乾蝕刻原理 (第四部分之三) (Stanford Nanofabrication Facility: Dry Etching - Dry Etching Mechanisms (Part 3 of 4))

    18:38史丹佛奈米製程中心:乾蝕刻-乾蝕刻原理 (第四部分之三) (Stanford Nanofabrication Facility: Dry Etching - Dry Etching Mechanisms (Part 3 of 4))
    • They tend to be isotropic.

      它們往往是各向同性的。

    • It can be a lot faster in the etching than sputtering, but a lot of times we need something more than isotropic.

      它的蝕刻速度比濺射快得多,但很多時候我們需要的不是各向同性。

    B2 中高級

    史丹佛奈米製造設施:乾式蝕刻 - 選擇乾式蝕刻製程與設備 (第四部曲/共四部) (Stanford Nanofabrication Facility: Dry Etching - Choosing a Dry Etching Process & Tool (Part 4 of 4))

    18:58史丹佛奈米製造設施:乾式蝕刻 - 選擇乾式蝕刻製程與設備 (第四部曲/共四部) (Stanford Nanofabrication Facility: Dry Etching - Choosing a Dry Etching Process & Tool (Part 4 of 4))
    • And the fluorine tend to be faster but more, uh, more, uh, isotropic than the chlorine and bromine.

      CF4 化合物可以添加或不添加 CHF3,也可以添加氫。

    • So that as, as one side I'm adding oxygen and fluorine and so in this case I'm going to have a lot more free fluorine going on and the, uh, this one X oxide but if at high pressures with the high fluorine case we're going to get we can actually get isotropic etching of oxide.

      在低壓條件下,我們通常不會加入氧氣,而是加入氫氣或碳。

    B2 中高級

    斯坦福納米加工設備:幹蝕刻 - 等離子體基礎知識和工具類型(第 2 部分,共 4 部分) (Stanford Nanofabrication Facility: Dry Etching - Basics of Plasmas & Types of Tools (Part 2 of 4))

    23:18斯坦福納米加工設備:幹蝕刻 - 等離子體基礎知識和工具類型(第 2 部分,共 4 部分) (Stanford Nanofabrication Facility: Dry Etching - Basics of Plasmas & Types of Tools (Part 2 of 4))
    • And it eliminates damage, so no ions or electron bombardment, no charging, no UV, and we get no x directionality, it's going to be totally isotropic before the action goes.

      它消除了破壞,是以沒有離子或電子轟擊,沒有充電,沒有紫外線,也沒有 X 方向性,在行動開始之前,它將是完全各向同性的。

    B2 中高級